| p型GaN欧姆接触的研究进展 |
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| 引用本文： | 潘群峰,刘宝林.p型GaN欧姆接触的研究进展[J].半导体技术,2004,29(8):15-18,33. |
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| 作者姓名： | 潘群峰 刘宝林 |
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| 作者单位： | 厦门大学物理系,福建,厦门,361005 |
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| 基金项目： | 国家自然科学基金
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福建省自然科学基金 |
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| 摘 要： | 宽带隙的GaN作为半导体领域研究的热点之一,近年来发展得很快.p型GaN的欧姆接触问题一直阻碍高温大功率GaN基器件的研制.本文讨论了金属化方案的选择、表面预处理和合金化处理等几个问题,回顾了近年来p型GaN欧姆接触的研究进展.
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| 关 键 词： | p型 GaN 欧姆接触 |
| 文章编号： | 1003-353X(2004)08-0015-04 |
Research and progress of ohmic contact to p-type GaN |
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| PAN Qun-feng,LIU Bao-lin.Research and progress of ohmic contact to p-type GaN[J].Semiconductor Technology,2004,29(8):15-18,33. |
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| Authors: | PAN Qun-feng LIU Bao-lin |
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| Abstract: | The wide-bandgap GaN has been extensively investigated and developed rapidly in recent years. But difficulty in obtaining low-resistance ohmic contacts to p-type GaN blocks the development of high temperature, high power GaN-based devices. Choice of metallization scheme, surface pretreatment and alloying process are discussed. The progress of ohmic contacts to p-type GaN are reviewed. |
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| Keywords: | p-type GaN ohmic contact |
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