Properties of niobium nitride-based Josephson tunnel junctions

High T_c (16.8 K) niobium nitride thin films have been prepared by rf diode sputtering in N₂/Ar atmosphere and subsequent high temperature annealing. Josephson tunnel junctions have been made by thermal oxidation of the films. The geometry is defined by high resolution photolithography. The Josephson junctions have been characterized by magnetic field diffraction measurements and other techniques and are shown to be particularly suitable for applications especially in superconducting microwave integrated devices.