Novel hemispherical vertical cavity 1.3 mu m surface-emitting laser on semi-insulating substrate |
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| Authors: | Ho J.C. Yu P.K.L. Jing X.L. Bradley E. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA; |
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| Abstract: | ![]()
A vertical cavity GaInAsP/InP surface-emitting laser at 1.3 mu m wavelength is demonstrated with a hemispherical cavity structure. The laser consists of a circular mesa buried (passivated) in polyimide and is made on a semi-insulating InP substrate. CW operation was obtained at 77 K with a threshold current density of 90 kA/cm/sup 2/.<> |
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