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| 掺杂Fe_2O_3对氧化钒相变的影响 | |
| 引用本文： | 孙健,李娜,刘英. 掺杂Fe_2O_3对氧化钒相变的影响[J]. 电子元件与材料, 2009, 28(10). DOI: 10.3969/j.issn.1001-2028.2009.10.008 |
| 作者姓名： | 孙健 李娜 刘英 |
| 作者单位： | 1. 南京师范大学,电气与自动化工程学院,江苏,南京,210042 2. 江苏兴顺电子元件厂,江苏,兴化,225700 |
| 基金项目： | 国家自然科学基金资助项目 |
| 摘 要： | 用电子陶瓷工艺制备了三种不同掺杂比例的临界热敏电阻CTR(Critical Temperature Resister),根据样品对应的热谱中的相变点,找出Fe2O3掺杂量与相变点的关系。从微观半导体理论分析晶粒体电特性,求解泊松方程,得出晶粒体中电势垒与受主杂质Fe2O3掺杂量的关系。结果表明:当x(Fe2O3)为10%～25%时,相变温度增加值?t和摩尔分数增加值(?x)2呈线性关系。 |
| 关 键 词： | CTR P2O5 Fe2O3掺杂量 VO2 相变 |
Influence of Fe2O3 doping on the phase change of VO2 |
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| SUN Jian,LI Na,LIU Ying. Influence of Fe2O3 doping on the phase change of VO2[J]. Electronic Components & Materials, 2009, 28(10). DOI: 10.3969/j.issn.1001-2028.2009.10.008 | |
| Authors: | SUN Jian LI Na LIU Ying |
| Abstract: | Three kinds of critical temperature resistor (CTR) with various dopant contents were prepared with the electronic ceramic technology. Based on the DSC thermograms of prepared CTR samples,the relation between the doping amount of Fe2O3 and the phase transition point of CTR was determined. The electrical characteristics of crystal grains contained in prepared CTR were analyzed using the microscopic semiconductor theory. And the relation between the electrical potential barrier and the doping amount of acceptor impurity Fe2O3 was determined for crystal grains through solving the Poisson's equation. The results show that,when the content of Fe2O3 is in the range of 10wt%～25wt%,the change in the phase transition temperature of CTR,Δt,is proportional to the square of change in the mole fraction of Fe2O3,(Δx)2. |
| Keywords: | CTR P2O5 VO2 |
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