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Effect of annealing temperature of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors
Authors:Ye Wei  Ren Wei  Shi Peng  Jiang Zhuangde
Affiliation:1. Electronic Materials Research Laboratory,Key Laboratory of the Ministry of Education & International Center for Dielectric Research,Xi'an Jiaotong University,Xi'an 710049,China;2. State Key Laboratory for Manufacturing Systems Engineering,Xi'an Jiaotong University,Xi'an 710049,China
Abstract:
Keywords:pyrochlore BZN thin films  ZnO-TFTs  RF magnetron sputtering  annealing temperature
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