Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra |
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| Authors: | G Lucovsky JG Hong CC Fulton NA Stoute Y Zou RJ Nemanich DE Aspnes H Ade DG Schlom |
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| Affiliation: | aDepartment of Physics, North Carolina State University, Raleigh, NC 27695, USA;bDepartment of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA;cDepartment of Materials Science, Pennsylvania State University, State College, PA, USA |
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| Abstract: | This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d* states, which define the optical band gap, Eg, and the conduction band offset energy with respect to crystalline Si, EB. Eg and EB scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices. |
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