SiC MOSFET功率器件特性参数的提取与拟合

为了对碳化硅(SiC)MOSFET功率器件的特性参数进行全面的研究,提出了一种碳化硅(SiC)MOSFET变温度参数模型,该模型考虑了功率器件中封装引脚寄生电感、内部寄生电容、体二极管等特性参数,并根据器件的开关过程中的不同阶段,将功率器件中的导电沟道等效为不同电路模型.为获取该模型中的涉及的特性参数,搭建了基于Agi...

Extraction and Fitting of Characteristic Parameters of SiC MOSFET Power Devices

In order to study the parasitic parameters of SiC MOSFET power devices comprehensively, a variable temperature parameter model of silicon carbide MOSFET is proposed. The parasitic inductance, internal parasitic capacitance, parasitic diode and other parasitic parameters are considered in this model. According to the different stages of the switching process of the device, the conductive channel of power device is equivalent to different circuit models. In order to obtain the required parameters in the proposed model, a test platform based on Agilent B1505 A power semiconductor analyzer and vector network analyzer(VNA) was built to measure the static characteristic parameters of SiC MOSFET power devices comprehensively. Then an improved BP artificial neural network based on Bayesian regularized LM algorithm is used to fit the measured nonlinear data. The results of fitting show that this method has higher accuracy and generalization ability than the traditional fitting methods, which provides an important basis for the modeling and parameter analysis of SiC MOSFET power devices.