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Experimental results on fast surface states and 1/f noise in m.o.s. transistors
Authors:Broux   G. van Overstraeten   R. Declerck   G.
Affiliation:Elektrotechnisch Instituut, Laboratorium Fysica en Elektronica van de Halfgeleiders, Heverlee, Belgium;
Abstract:
Experimental results for 1/f noise in m.o.s. transistors with very low surface state densities are presented. A direct relation between noise and surface state density is found, extending previously published data.
Keywords:
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