|
|||||
|
|
Bulk-driven class AB fully-balanced differential difference amplifier |
|
| Authors: | Fabian Khateb Spyridon Vlassis Tomasz Kulej George Souliotis |
| Affiliation: | 1.Department of Microelectronics,Brno University of Technology,Brno,Czech Republic;2.Faculty of Biomedical Engineering,Czech Technical University in Prague,Kladno,Czech Republic;3.Electronics Laboratory, Physics Department,University of Patras,Rio, Achaia,Greece;4.Department of Electrical Engineering,Technical University of Cz?stochowa,Cz?stochowa,Poland;5.Department of Electrical Engineering,Technological Educational Institute of Western Greece,Patras,Greece |
| Abstract: | This paper presents a new low-voltage class AB fully-balanced differential difference amplifier (FB-DDA) employing the bulk-driven technique. At the FB-DDA differential pairs the bulk terminal of the MOS transistors are used as signal inputs in order to increase the common-mode input range under low supply voltage. At the class AB output stages the bulk terminal of the MOS transistors are used as control inputs in order to adjust the quiescent currents and compensate them against the process and temperatures (P/T) variation. The voltage supply of the FB-DDA is 0.7 V and the quiescent power consumption is 8.3 µW. The open loop voltage gain is 68 dB and the gain–bandwidth product is 168 kHz for 10 pF capacitive load. The circuit performance was simulated in Cadence/Spectre environment using the TSMC 0.18 µm CMOS process. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |