| 摘 要： | Two designs of vertical-cavity surface-emitting lasers (VCSELs) for the 1.3 μm spectral range on GaAs substrates with active
regions based on InAs/InGaAs quantum dots and InGaAsN quantum wells are considered. The relationship between the active region
properties and optical microcavity parameters required for lasing has been investigated. A comparative analysis is made of
VCSELs with active regions based on InAs/InGaAs quantum dots or on InGaAsN quantum wells, which are fabricated by MBE and
demonstrate room-temperature CW operation. Optimization of the vertical microcavity design provides single-pass internal optical
losses lower than 0.05%.
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 7, 2001, pp. 881–888.
Original Russian Text Copyright ? 2001 by Maleev, Egorov, Zhukov, Kovsh, Vasil’ev, Ustinov, Ledentsov, Alferov.
|
