Distribution of Te inclusions in a CdZnTe wafer and their effects on the electrical properties of fabricated devices |
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Authors: | A Hossain L Xu AE BolotnikovGS Camarda Y CuiG Yang K-H KimRB James |
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Affiliation: | a Brookhaven National Laboratory, Upton, NY 11973, USA b Northwestern Polytechnical University, Xi'an, Shaanxi 710072, China |
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Abstract: | We quantified the size and concentration of Te inclusions along the lateral- and the growth-directions of a ∼6 mm-thick wafer cut axially along the center of a CdZnTe ingot. We fabricated devices, selecting samples from the center slice outward in both directions, and then tested their response to incident X-rays. We employed, in concert, an automated IR transmission microscopic system and a highly collimated synchrotron X-ray source that allowed us to acquire and correlate comprehensive information on Te inclusions and other defects to assess the material factors limiting the performance of CdZnTe detectors. |
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Keywords: | CdZnTe Detectors Te inclusions Dislocations Pipes IR transmission |
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