High-speed electroabsorption modulators buried with ruthenium-doped SI-InP |
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| Authors: | M. Tamura T. Yamanaka H. Fukano Y. Akage Y. Kondo T. Saitoh |
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| Affiliation: | NTT Photonics Labs., NTT Corp., Kanagawa, Japan; |
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| Abstract: | ![]()
InGaAlAs-InAlAs electroabsorption modulators are successfully fabricated using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison of measured and calculated microwave characteristics reveals that there is no additional microwave loss because zinc diffusion is inhibited by the use of Ru-doped SI-InP layers. A small-signal electrooptical response with a -3-dB electrical bandwidth of over 50 GHz is demonstrated. |
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