n-channel formation on semi-insulating InP surface by m.i.s.f.e.t. |
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| Authors: | Kawakami Tsuyoshi Okamura Masamichi |
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| Affiliation: | NTT, Musashino Electrical Communication Laboratory, Musashino, Japan; |
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| Abstract: | InP m.i.s.f.e.t.s using Fe-doped semi-insulating material surface have been fabricated. The devices, composed of sulphur-diffused n-type source and drain and c.v.d. Al2O3 gate insulator, exhibited n-channel normally-off behaviour and a source drain capacitance two orders of magnitude smaller than that of p-InP m.i.s.f.e.t.s with the same dimensions. |
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