Effect of carrier diffusion on the small-signal behavior of IMPATT diodes

An approach to the detailed computer simulation of dc and small-signal IMPATT behavior is described in which allowance is made for carrier-diffusion effects. Results are presented for a variety of structures in Si and GaAs, including high-efficiency structures using the latter material. The results from the simulation are also compared with the predictions of a quasi-static theory for a particular case, and good general agreement is observed.