Understanding wide-band MOS transistors |
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Authors: | Steininger J.M. |
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Affiliation: | AT&T Bell Lab., Reading, PA; |
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Abstract: | ![]() A quantitative understanding of MOS-transistor speed has been slow to emerge because of the absence of a commonly agreed-upon figure of merit for MOS-transistor speed and a lack of familiarity among designers with MOS-amplifier topologies. It is suggested that these problems can be addressed through the use of the unity-gain current frequency (f T) as a figure of merit for MOS transistors, the use of fT in the prediction of amplifier bandwidth, and a wider familiarity among designers with practical examples of MOS wideband amplifiers. The use of fT as a figure of merit is discussed, and the achievable amplifier bandwidths are determined. Increasing the fT of an MOS device by making the gm larger or the Cg smaller, or both, is discussed. Wideband CMOS amplifiers are considered |
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