Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy |
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Authors: | M S Han S R Hahn H C Kwon Y Bin T W Kang J H Leem Y B Hou H C Jeon J K Hyun Y T Jeoung H K Kim J M Kim T W Kim |
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Affiliation: | (1) Semiconductor Research and Development Center, Korea Electronics Co., 730-031 Kumi, Korea;(2) Department of Physics, Dongguk University, 100-715 Seoul, Korea;(3) 4-5-1, Agency for Defence Development, 305-600 Daejeon, Korea;(4) Department of Physics, Kwangwoon University, 139-701 Seoul, Korea |
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Abstract: | Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment. |
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Keywords: | HgTe/CdTe superlattices interdiffusion molecular beam epitaxy |
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