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Investigation of the nonlinearity properties of the DC I-V characteristics of metal-insulator-metal (MIM) tunnel diodes with double-layer insulators |
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| Authors: | Barnabás Hegyi Árpád Csurgay Wolfgang Porod |
| Affiliation: | (1) Faculty of Information Technology, Péter Pázmány Catholic University, Práter u. 50/a., 1083 Budapest, Hungary;(2) Center for Nano Science and Technology, Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, IN 46556, USA |
| Abstract: | The DC I-V characteristics of metal-insulator-metal (MIM) tunnel diodes with double insulator layer is investigated by means of computer simulations. Simulation results on the properties of the diode characteristics such as resistance and quality factor are presented in various diagrams and the dependences on the different diode parameters are discussed. The simulations algorithm applied is also described in brief. |
| Keywords: | MIM diode Tunneling theory Computer simulation DC I-V characteristics Double insulator layer |
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