| CuO、V_2O_5掺杂(1-x)BiNbO_(4-x)ZnTaO_6的介电性能 |
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| 引用本文： | 袁力,丁士华,姚熹.CuO、V_2O_5掺杂(1-x)BiNbO_(4-x)ZnTaO_6的介电性能[J].电子元件与材料,2005,24(3):20-22. |
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| 作者姓名： | 袁力 丁士华 姚熹 |
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| 作者单位： | 同济大学功能材料研究所,上海,200092 |
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| 基金项目： | 国家高技术研究发展计划(863计划);国家重点基础研究发展计划(973计划);上海市学科建设项目 |
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| 摘 要： | 对CuO、V2O5掺杂的(1–x)BiNbO4-xZnTaO6(x=0.05～0.15)陶瓷体系结构和介电性能进行了研究。试验结果表明,940℃以下,体系为斜方BiNbO4和斜方ZnTaO6的复相结构;掺杂CuO、V2O5使得体系在较低温度下即可烧结成瓷,随着(1–x)BiNbO4-xZnTaO6体系中x的增加,陶瓷表观密度上升,εr下降,温度系数、损耗则呈增加趋势。x=0.05,910℃烧结保温2h有较好的微波性能,εr约为40,Q·f值达25000GHz。
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| 关 键 词： | 无机非金属材料 微波介质陶瓷 介电性能 低温烧结 复相 |
| 文章编号： | 1001-2028(2005)03-0020-03 |
Study on Dielectric Properties of (1-x) BiNbO4-xZnTaO6 Ceramics with CuO-V2O5 Additive |
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| YUAN Li,DING Shi-hua,YAO Xi.Study on Dielectric Properties of (1-x) BiNbO4-xZnTaO6 Ceramics with CuO-V2O5 Additive[J].Electronic Components & Materials,2005,24(3):20-22. |
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| Authors: | YUAN Li DING Shi-hua YAO Xi |
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| Abstract: | Structure and dielectric properties of the group of (1–x ) BiNbO4-xZnTaO6 (x = 0.05□0.15) composites , with doped CuO and V2O5 were studied. It is found that the orth BiNbO4 and orth ZnTaO6 are predominant in this system under 940℃. Density, dielectric temperature coefficiency and dielectric loss of (1–x) BiNbO4-xZnTaO6 composites were found to increase while dielectric constant decreases with increasing of the x value. The system of (1–x) BiNbO4-xZnTaO6 ceramics with doped 0.2 wt%CuO and 0.2 wt% V2O5, sintered at 910℃ have the optimum microwave dielectric properties:εr=40, Q·f = 25 000 GHz. |
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| Keywords: | inorganic non-metallic materials microwave dielectrics ceramics dielectric properties low temperature sintering multiphase |
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