Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors |
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Authors: | J Garcia C Dua S Mohammadi J W Park D Pavlidis |
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Affiliation: | (1) Thomson CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91404 Orsay Cedex, France;(2) Department of Electrical Engineering and Computer Science, University of Michigan, 48109-2122 Ann Arbor, MI |
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Abstract: | We report on the complete characterization of a hydride- and hydrogen-free chemical beam epitaxy (CBE) process for the realization
of GaAs/GaInP heterojunction bipolar transistors. Alternative group V sources tertiarybutylarsine, tertiarybutylphosphine,
and trisdimethylaminoarsenic are used instead of traditionally employed AsH3 and PH3. A very high degree of reproducibility of growth parameters (fluxes, substrate temperature, doping levels) is demonstrated.
Total defect densities lower than 10 def/cm2 are routinely obtained. Large-area GaInP/GaAs heterojunction bipolar transistors (HBTs) show a high current gain of 225 for
base sheet resistance of 400 ohm/sq. The devices also exhibit excellent high-frequency characteristics. A cut-off frequency
of 48 GHz and a maximum oscillation frequency of 60 GHz have been obtained. These results demonstrate the high potential capability
of CBE for high-throughput GaInP/GaAs HBT production. |
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Keywords: | Bipolar transistor chemical beam epitaxy (CBE) GaInP/GaAs |
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