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RFIC TaN/SrTiO$_3/$TaN MIM Capacitors With 35fF$/muhboxm^2$Capacitance Density
Abstract:A very high density of 35$hboxfF/muhboxm^2$is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-$kappa (kappa=hbox169)$$hboxSrTiO_3$fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100kHz to 10GHz, low leakage current of 1$times hbox10^-7 hboxA/cm^2$at 1V are simultaneously measured. The small voltage dependence of a capacitance$Delta C/C$of 637ppm is also obtained at 2GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.
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