Hopping conduction in heavily doped bulk n-type SiC |
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Authors: | W C Mitchel A O Evwaeaye S R Smith M D Roth |
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Affiliation: | (1) Wright Laboratory, WL/MLPO, 45433-7707 Wright-Patterson AFB, OH;(2) Present address: Department of Physics, University of Dayton, 300 College Park Dr., 45469-2311 Dayton, OH;(3) Present address: University of Dayton Research Institute, 300 College Park Dr., 45469-0178 Dayton, OH |
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Abstract: | The electronic properties of heavily doped n-type 4H, 6H, and 15R SiC have been studied with temperature dependent Hall effect,
resistivity measurements, and thermal admittance spectroscopy experiments. Hopping conduction was observed in the resistivity
experiments for samples with electron concentrations of 1017 cm−3 or higher. Both band and hopping conduction were observed in all three polytypes in resistivity and Hall effect experiments.
The hopping conduction activation energy ε3 obtained from the resistivity measurements varied from 0.003 to 0.013 eV. The ε3 value obtained from thermal admittance spectroscopy measurements were slightly lower. The nitrogen ionization levels were
observed by thermal admittance spectroscopy only in those samples where hopping conduction was not detected by this experiment.
Free carrier activation energy Ea for nitrogen was difficult to determine from temperature dependent Hall effect measurements because of the effects of hopping
conduction. A new feature in the apparent carrier concentration vs inverse temperature data in the hopping regime was observed. |
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Keywords: | Admittance spectroscopy Hall effect hopping conduction silicon carbide |
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