ZnO Thin Film, Device, and Circuit Fabrication using Low-Temperature PECVD Processes |
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| Authors: | Jie Sun Devin A. Mourey Dalong Zhao Thomas N. Jackson |
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| Affiliation: | (1) Department of Electrical Engineering, Center for Thin Film Devices and Materials Research Institute, Penn State University, University Park, PA 16802, USA;(2) Department of Materials Science and Engineering, Center for Thin Film Devices and Materials Research Institute, Penn State University, University Park, PA 16802, USA |
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| Abstract: | We report undoped ZnO films deposited at low temperature (200°C) using plasma-enhanced chemical vapor deposition (PECVD).
ZnO thin-film transistors (TFTs) fabricated using ZnO and Al2O3 deposited in situ by PECVD with moderate gate leakage show a field-effect mobility of 10 cm2/V s, threshold voltage of 7.5 V, subthreshold slope <1 V/dec, and current on/off ratios >104. Inverter circuits fabricated using these ZnO TFTs show peak gain magnitude (dV
out/dV
in) ~5. These devices appear to be strongly limited by interface states and reducing the gate leakage results in TFTs with lower
mobility. For example, ZnO TFTs fabricated with low-leakage Al2O3 have mobility near 0.05 cm2/V s, and five-stage ring-oscillator integrated circuits fabricated using these TFTs have a 1.2 kHz oscillation frequency
at 60 V, likely limited by interface states. |
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| Keywords: | Plasma chemical vapor deposition (PECVD) thin-film transistors (TFTs) ring oscillators
in situ deposition |
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