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The effect of deposition parameters on the properties of SrCu2O2 films fabricated by pulsed laser deposition |
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| Authors: | EL Papadopoulou ZA Viskadourakis AV Pennos E Aperathitis |
| Affiliation: | a Institute of Electronic Structure & Laser, Foundation for Research and Technology-Hellas, P.O. Box 1527, Heraklion 71110, Crete, Greece b Materials Science & Technology Department, University of Crete, P.O. Box 2208, 71003 Heraklion, Crete, Greece c Umicore Group Research and Development, Kasteelstraat 7, B-2250 Olen, Belgium |
| Abstract: | SrCu2O2 (SCO) thin films have been fabricated by pulsed laser deposition at oxygen partial pressures between 5 × 10− 5-5 × 10− 2 mbar and substrate temperatures from 300 °C to 500 °C. All films were single-phase SrCu2O2, p-type materials. Films deposited at a substrate temperature of 300 °C and oxygen pressure 5 × 10− 4 mbar exhibited the highest transparency (∼ 80%), having conductivity 10− 3 S/cm and carrier concentration around 1013 cm− 3. Films deposited at oxygen partial pressure higher than 10− 3 mbar exhibited higher conductivity and carrier concentration but lower transmittance. Depositions at substrate temperatures higher than 300 °C gave films of high crystallinity and transmittance even for films as thick as 800 nm. The energy gap of SrCu2O2 thin films was found to be around 3.3 eV. |
| Keywords: | Laser ablation Depositon process Strontium |
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