In2Se3纳米片改性的GO/WS2/Mg-ZnO复合材料光催化性能的研究

二维纳米材料由于其结构和性能的独特性受到广泛的关注，各类二维纳米材料合成方法和表面改性的研究也得到了快速发展，在光催化性能提升和能源环境领域等方面发挥着重要作用。本文通过在复合物GO/WS₂/Mg-ZnO(rGOWMZ)中添加直接带隙半导体In₂Se₃纳米片，合成rGOWMZ+In₂Se₃复合材料。并研究其光催化性能，发现性能得到了明显的改善，其中In₂Se₃纳米片质量分数为0.5%经过600℃热处理的复合物，在自然光照射下对罗丹明B的降解率为99.6%。本报道中In₂Se₃纳米片是通过液相超声剥离法制备的，大小为100 nm，厚度约为5层。并采用透射电子显微镜、原子力显微镜、X射线衍射仪、扫描电子显微镜对复合材料进行了物相分析。发现rGOWMZ+In₂Se₃复合材料对有机颜料罗丹明B具有优异的光催化性能，此复合材料将在光催化领域中具有巨大的应用潜力。

In2Se3 Sheets as Photosensitizers to Enhance the Photocatalytic Performance of Graphene Oxide/WS2/Mg-doped ZnO Composite under Natural Sunlight

With the development of photocatalytic technology, the research and exploration of photocatalytic properties of 2D materials have also attracted much attention. The photocatalytic performance of graphene oxide/WS₂/Mg-doped ZnO (rGOWMZ) composites under 600 ℃ annealing is excellent because the degradation rate of Rhodamine B (RhB) is 99.6% under natural light, with the added 0.5% amount of In₂Se₃ sheets which is a direct bandgap semiconductor. The In₂Se₃ sheets prepared through liquid exfoliation are about 100 nm and ~5 atomic layers thickness. The composites are carried out with Transmission electron microscope (TEM), Atomic force microscope (AFM), X-ray diffraction (XRD), and Scanning electron microscope (SEM). And the rGOWMZ+In₂Se₃ composites exhibit excellent photocatalytic property, showing great potential in photocatalyst application.