| Piezoresistive Sensors Based on Carbon Nanotube Films |
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| 作者姓名： | LuJian-wei WANGWan-lu LIAOKe-jun WANGYong-tian LIUCHang-lin ZengQing-gao |
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| 作者单位： | [1]Dept.ofAppl.Phys.,ChongqingUniversity,Chongqing400044,CHN／／ChongqingDailyGroup,Chongqing400010,CHN [2]Dept.ofAppl.Phys.,ChongqingUniversity,Chongqing400044,CHN [3]ChongqingOptoelectronicsResearchInstitute,Chongqing400060,CHN |
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| 摘 要： | Piezoresistive effect of carbon nanotube films was investigated by a three-point bending test. Carbon nanotubes were synthesized by hot filament chemical vapor deposition. The experimental results showed that the carbon nanotubes have a striking piezoresistive effect. The relative resistance was changed from 0 to 10.5 X 10-2 and 3.25 X 10-2 for doped and undoped films respectively at room temperature when the microstrain under stress from 0 to 500. The gauge factors for doped and undoped carbon nanotube films under 500 microstrain were about 220 and 67 at room temperature, respectively, exceeding that of polycrystalline silicon (30) at 35 ℃. The origin of the resistance changes in the films may be attributed to a strain-induced change in the band gap for the doped tubes and the defects for the undoped tubes.
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| 关 键 词： | 压阻传感器 碳纳米管 压电电阻率 电阻变化 带隙 |
| 收稿时间： | 2004/8/26 |
Piezoresistive Sensors Based on Carbon Nanotube Films |
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| LuJian-wei WANGWan-lu LIAOKe-jun WANGYong-tian LIUCHang-lin ZengQing-gao.Piezoresistive Sensors Based on Carbon Nanotube Films[J].Semiconductor Photonics and Technology,2005,11(1):61-64. |
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| Authors: | U Jian-wei WANG Wan-lu LIAO Ke-jun WANG Yong-tian LIU Chang-lin ZENG Qing-gao |
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| Abstract: | Piezoresistive effect of carbon nanotube films was investigated by a three-point bending test.Carbon nanotubes were synthesized by hot filament chemical vapor deposition.The experimental results showed that the carbon nanotubes have a striking piezoresistive effect.The relative resistance was changed from 0 to 10.5×10-2 and 3.25×10-2 for doped and undoped films respectively at room temperature when the microstrain under stress from 0 to 500. The gauge factors for doped and undoped carbon nanotube films under 500 microstrain were about 220 and 67 at room temperature, respectively, exceeding that of polycrystalline silicon (30) at 35℃.The origin of the resistance changes in the films may be attributed to a strain-induced change in the band gap for the doped tubes and the defects for the undoped tubes. |
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| Keywords: | Carbon nanotubes Strain Piezoresistivity Resistance change Band gap |
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