Positron-defect profiling in Cd1−xZnxTe wafers after saw cutting |
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| Authors: | Sean P. Mcneil Kelvin G. Lynn Marc H. Weber Csaba Szeles Raji Soundararajan |
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| Affiliation: | (1) Center for Materials Research, Washington State University, 99164 Pullman, WA;(2) Department of Physics, Washington State University, USA;(3) eV Products, II-VI Inc., 16056 Saxonburg, PA |
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| Abstract: | Near-surface damage induced by saw cutting of ingots of Cd1−xZnxTe was investigated by positron-defect depth profiling. The damage extends to several micrometers depth and depends on the
cutting apparatus. The samples were polished and etched repeatedly, followed each time by positron-depth profiling. New subsurface
damage created during the polishing process is observed. No new damage is observed after etching. Positron-depth profiling
is suggested as a diagnostic tool to monitor the quality of sample surfaces. |
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| Keywords: | Surface damage saw cutting semiconductors CdZnTe positrons defects depth profile |
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