Single quantum well strained InGaAs/GaAs lasers with large modulation bandwidth and lower damping |
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Authors: | Nagarajan R. Fukushima T. Bowers J.E. Geels R.S. Coldren L.A. |
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Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA; |
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Abstract: | ![]() Strained In/sub 0.2/Ga/sub 0.8/As/GaAs single quantum well polyimide buried ridge waveguide lasers with 3 dB modulation bandwidths of 15 GHz and gain compression factors in as small as 9.98*10/sup -18/cm/sup -3/ have been fabricated. The authors have also observed that the gain compression factor is not larger than in lasers with bulk active areas, and is lower for structures with a smaller number of wells and shorter cavity lengths.<> |
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