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CMOS图像传感器中分段电容DAC非理想因素研究
引用本文:孙权,姚素英,徐文静,聂凯明,徐江涛.CMOS图像传感器中分段电容DAC非理想因素研究[J].传感技术学报,2014,27(1).
作者姓名:孙权  姚素英  徐文静  聂凯明  徐江涛
作者单位:天津大学电子信息工程学院;
基金项目:National Natural Science Foundation of China(61036004)
摘    要:CMOS图像传感器信号处理中通常采用分段电容DAC产生斜坡参考电压。研究了分段电容DAC精确的电容失配及寄生与其转换精度的关系式。基于对分段电容DAC工作原理的研究,导出了电容失配及寄生模型;针对其分数桥接电容失配、各二进制电容间的失配及寄生电容问题进行了理论分析;对分段电容DAC进行非理想因素仿真,设计了一个采用分段电容DAC的10位单斜ADC并对其进行测试,仿真和测试结果均验证了理论分析的正确性。上述理论分析结果可作为分段电容DAC的设计指导。

关 键 词:微电子学与固体电子学  分段电容DAC  电容失配  寄生  转换精度

Research on Non-Ideal Factors of Segmented-Capacitor DAC in CMOS Image Sensor
Abstract:segmented-capacitor digital analog converter (SC DAC) is usually used in CMOS image sensor to generate a ramp reference voltage. Precise relationships between conversion resolution and non-ideal factors segmented-capacitor digital analog converter are derived. These non-ideal factors consist of coupling capacitor mismatch, binary-weighted-capacitor mismatch and parasitic effects. Initially, based on the study of SC DAC operation principle, mathematical models are established. Then the effects of non-ideal factors on SC DAC are analyzed. Simulation and measurement results verify the theoretical analysis. These precise relationships serve as a guideline for the design of SC DAC.
Keywords:microelectronics and solid electronics  segmented-capacitor DAC  capacitor mismatch  parasitic  conversion resolution
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