Preparation of single-crystal 29Si |
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| Authors: | A. V. Gusev V. A. Gavva E. A. Kozyrev A. M. Potapov V. G. Plotnichenko |
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| Affiliation: | 1.Institute of Chemistry of High-Purity Substances,Russian Academy of Sciences,Nizhni Novgorod,Russia;2.Fiber Optics Research Center,Russian Academy of Sciences,Moscow,Russia |
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| Abstract: | A process has been developed for the preparation of single-crystal 29Si from 29Si-enriched silane. A silicon single crystal has been grown with a 29Si content over 99.9 at %. The oxygen and carbon concentrations in the crystal are under 1 × 1016 cm−3, and its resistivity exceeds 1 kΩ cm. |
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