| c轴取向PbTiO3外延生长的研究 |
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| 引用本文： | 陈先同,平井敏雄.c轴取向PbTiO3外延生长的研究[J].无机材料学报,1995,10(2):225-230. |
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| 作者姓名： | 陈先同 平井敏雄 |
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| 作者单位： | 中国科学院上海硅酸盐研究所，日本东北大学金属材料研究所 |
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| 基金项目： | 863－715和攀登A资助 |
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| 摘 要： | 本文研究了ＭＯＣＶＤ法淀积过程中工艺条件对ＰｂＴｉＯ３膜ｃ轴取向度的影响，探讨了ＰｂＴｉＯ３膜的生长过程，通过调节氧气流量首次在ＭｇＯ（１００）单晶衬底上淀积出ｃ轴取向的ＰｂＴｉＯ３外延膜。ＰｂＴｉＯ３外延膜的介电常数为９０，折射率为２．６４，均和单晶性能一致。
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| 关 键 词： | 外延生长 薄膜 MOCVD 钛酸铅 c轴取向 |
Epitaxial Growth of c-Axis Oriented PbTiO_3 Thin Film |
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| Chen Xiantong, Luo Weigen, Ding Aili, Li Hui, Qiu Pingsun.Epitaxial Growth of c-Axis Oriented PbTiO_3 Thin Film[J].Journal of Inorganic Materials,1995,10(2):225-230. |
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| Authors: | Chen Xiantong Luo Weigen Ding Aili Li Hui Qiu Pingsun |
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| Abstract: | We have studied the effect of process parameters on c-axis orientation of PbTiO3 thin film and the epitaxial mechanism of c-axis oriented PbTiO3 thin film by MOCVD method. The epitaxial thin film on MgO(100) substrate with high c-axis orientation have been obtained by adjusting the oxygen flow rate. The dielectric constant and the refrative index of epitaxial PbTiO3 film is 90 and 2.64 respectively coinciding with thee of PbTiO3 Bingle Crystal. |
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| Keywords: | epitaxial growth PbTiO3 thin film MOCVD |
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