V-shaped-gate GaAs m.e.s.f.e.t. for improved high-frequency performance |
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Authors: | Kohn E |
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Affiliation: | RWTH Aachen, Institut für Halbleitertechnik, Aachen, West Germany; |
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Abstract: | The idea of gate shaping in f.e.t.s was implemented into the GaAs-m.e.s.f.e.t. structure. A m.e.s.f.e.t. with 2 ?m gate length was fabricated, the measured m.a.g. data of which allow an extrapolation to an fmax of about 45 GHz. |
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