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TFT-LCD工艺与静电击穿
引用本文:李欣欣,龙春平,王威.TFT-LCD工艺与静电击穿[J].现代显示,2007,18(3):59-63,42.
作者姓名:李欣欣  龙春平  王威
作者单位:京东方科技集团股份有限公司,北京,100176
摘    要:薄膜晶体管液晶显示(thin film transistor—liquid crystal display,TFT—LCD)的制造工艺是一个复杂的过程,各个环节都可能发生静电击穿(electrostatic discharge,ESD)现象,导致TFT-LCD器件被破坏,极大地影响了良品率。本文根据薄膜晶体管(TFT)生产工艺的实际情况,阐述了产线里各类产品型号的ESD发生状况。在此基础上,对各种设计、工艺过程和工艺参数对ESD造成的影响进行了分析研究,为实际的生产提供了指导作用。

关 键 词:薄膜晶体管液晶显示器  静电击穿  电场强度
文章编号:1006-6268(2007)03-0059-05
收稿时间:2007-01-16
修稿时间:2007-01-16

TFT-LCD Process and ESD
LI Xin-xin,LONG Chung-ping,WANG Wei.TFT-LCD Process and ESD[J].Advanced Display,2007,18(3):59-63,42.
Authors:LI Xin-xin  LONG Chung-ping  WANG Wei
Affiliation:Beijin Orient Electronics Group Co.,Ltd, Beijing 100176,China
Abstract:TFT-LCD produce is a complicated process, ESD phenomena can occurs among every process step, which cause TFT is destroyed and has a big bad effect to the product yield. This paper describe ESD phenomena in kinds of product model according to the fact of TFT produce. And then, analysis the mechanism that based on design and produce process, which provide a guide to producing practice.
Keywords:TFT-LCD  ESD  electric field strength
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