Vertically compact 15 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy |
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| Authors: | Ralston J.D. Gallagher D.F.G. Tasker P.J. Zappe H.P. Esquivias I. Fleissner J. |
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| Affiliation: | Fraunhofer Inst. fur Angewandte Festkorperphys., Freiburg, Germany; |
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| Abstract: | ![]()
A GaAs/Al/sub x/Ga/sub 1-x/As multiple quantum well laser with an electrical modulation bandwidth exceeding 15 GHz has been fabricated. Optimised design of the waveguide, including development of high Al mole fraction (x=0.8) cladding layers, together with a coplanar electrode geometry, has resulted in a vertically compact laser structure suitable for integration.<> |
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