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Synthesis of low resistivity complex oxides on MgO using Pt as buffer layer
Authors:P. Tiwari  X. D. Wu  S. R. Foltyn  I. H. Campbell  Q. X. Jia  R. E. Muenchausen  D. E. Peterson  T. E. Mitchell
Affiliation:(1) Superconductivity Technology Center, Los Alamos National Laboratory, 87545 Los Alamos, NM;(2) Center for Materials Science, Los Alamos National Laboratory, 87545 Los Alamos, NM;(3) Present address: IBM Microelectronics, 1000 River St, 05452 Essex Junction, VT
Abstract:Highly crystalline SrRuO3 (SRO) and La0.5Sr0.5CoO3 (LSCO) thin films were deposited on (100) Pt/ MgO by pulsed laser deposition. The films were mainly (001) textured normal to the substrate surface with a high degree of in-plane orientation with respect to the substrate’s major axes. These films were characterized using x-ray diffraction, Rutherford backscattering, four-point probe resistivity measurement, and transmission electron microscopy. The room temperature resistivity for LSCO and SRO films on Pt/MgO was found to be ∼35 and ∼40 μΩ-cm, respectively. An ion beam minimum channeling yield of ∼43% and ∼33% was obtained for LSCO and SRO films, respectively. The interface between Pt and oxide was found to be smooth and free from any interfacial diffusion. This result showed that high-quality low resistivity oxide thin films can be deposited on Pt.
Keywords:Low resistivity oxide  Pt/MgO  pulsed laser deposition (PLD)  thin films
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