| 硅中E_c-O.18 eV铜能级的单轴应力深能级瞬态谱研究 |
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| 引用本文： | 姚秀琛,王雷,陈开茅,秦国刚.硅中E_c-O.18 eV铜能级的单轴应力深能级瞬态谱研究[J].半导体学报,1989(5). |
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| 作者姓名： | 姚秀琛 王雷 陈开茅 秦国刚 |
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| 作者单位： | 北京大学物理系，北京大学物理系，北京大学物理系，中国高等科学技术中心(世界实验室) 北京大学物理系 |
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| 摘 要： | 首次用单轴应力下的深能级瞬态谱法研究了N型直拉硅中与铜有关的主要深能级E_c-0.18eV.由实验结果推断,这个能级对应于硅中两个不同的铜中心,其深能级的激活能十分接近,单轴应力使偶然简并解除从而将它们分开.
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| 关 键 词： | 硅 深中心 铜 |
Study of Copper-Related Deep Level E_c-0.18eV in Silicon with Uniaxially Stressed Deep Level Transient Spectroscopy |
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| Yao Xiuchen/.Study of Copper-Related Deep Level E_c-0.18eV in Silicon with Uniaxially Stressed Deep Level Transient Spectroscopy[J].Chinese Journal of Semiconductors,1989(5). |
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| Authors: | Yao Xiuchen/ |
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| Affiliation: | World Laboratory |
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| Abstract: | The main copper-related deep level E_c-0.18eV in n-type silicon has been studied withUniaxially Stressed Deep Level Transient Spectroscopy for the first time. Judging from the ex-perimental results, this level corresponds to two different copper centers with their activationenergies very close to one another.These two centers can be distinguished from one anotherby removing the accidental degeneracy with uniaxial stress. |
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| Keywords: | Silicon Deep center Copper |
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