The growth and electrical properties of single crystal Cd3As2 platelets

Single crystal platelets of Cd₃As₂ having carrier concentrations less than 10²⁴ m⁻³ have been grown from the vapour in the presence of argon gas and excess cadmium vapour. It is shown that the resistivity and Hall data is consistent with a band model in which there is a direct band-gap atk=0 of approximately 0.38 eV and an indirect zero band-gap. It is suggested that the large electron carrier concentrations usually present in Cd₃As₂ result from anti-structure disorder.