Temperature dependent electrical and dielectric properties of Sn/p-Si metal-semiconductor (MS) structures

In this study, we investigated temperature dependent electrical and dielectric properties of the Sn/p-Si metal-semiconductor (MS) structures using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics in the temperature range 80-400 K. The dielectric constant (ε′), dielectric loss (ε′′), dielectric loss tangent (tan δ) and ac electrical conductivity (σ_ac) were calculated from the C-V and G/ω-V measurements and plotted as a function of temperature. The values of the ε′, ε′′, tan δ and σ_ac at low temperature (=80 K) were found to be 0.57, 0.37, 0.56 and 1.04 × 10⁻⁷, where as the values of the ε′, ε′′, tan δ and σ_ac at high temperature (=400 K) were found to be 0.75, 0.44, 0.59 and 1.21 × 10⁻⁶, respectively. An increase in the values of the ε′, ε′′, tan δ and σ_ac where observed with increase in temperature. Furthermore, the effects of interface state density (N_SS) and series resistance (R_S) on C-V characteristics were investigated in the wide temperature range.