Characterization and modeling of hot carrier injection in LDMOS for L-band radar application |
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Authors: | L Lachéze P Dherbécourt V Purohit JP Sipma P Eudeline |
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Affiliation: | a GPM UMR CNRS 6634, Universit de Rouen, 76801 St-Etienne-du-Rouvray, France b THALES AIR SYSTEM, ZI du Mont Jarret, 76520 Ymare, France |
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Abstract: | This paper reports a methodology to correlate Hot Carrier Injection (HCI) degradation mechanism and electrical figures of merit on Lateral-Diffused Metal-Oxide-Semiconductor (LDMOS) transistor. This method is based on RF life test in radar operating conditions coupled to a high drain voltage in order to make visible HCI degradation. We propose drain current modeling vs. time based on a simple extraction procedure. The electron density trapped in the oxide is extracted from hot carrier induced series resistance enhancement model (HISREM - i.e. ΔRd model). From this methodology, the degradation of RF-LDMOS due to HCI is quantified and could be simulated with EDA. |
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