| 红外测量技术在MOCVD中的应用 |
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| 引用本文： | 路孟喜,曹健.红外测量技术在MOCVD中的应用[J].半导体技术,2007,32(8):689-691,731. |
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| 作者姓名： | 路孟喜 曹健 |
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| 作者单位： | 中国电子科技集团公司,第十三研究所,石家庄,050051;中国电子科技集团公司,第十三研究所,石家庄,050051 |
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| 摘 要： | 简要说明了红外辐射测量技术的工作原理与理论基础以及红外测量的特点.MOCVD硅片外延生长过程中反射率是实时变化的,但传统红外测量方法无法实现反射率的实时测量,因此造成较大的测量误差,无法准确反应外延片的表面温度,同时无法实现对生长速率的在位测量.德国AIXTRON公司的MOCVD测量系统中加入了由脉冲信号控制的LED红外发光器件,实现了温度与反射率、生长速率与膜厚的在位实时测量,从而达到对温度和膜厚的精确控制,取得良好的实验效果.
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| 关 键 词： | 红外辐射 温度测量 膜厚测量 在位实时测量 金属有机物化学气相淀积 |
| 文章编号： | 1003-353X（2007）08-0689-03 |
| 修稿时间： | 2007-05-08 |
Application of Infrared Measurement Technology in MOCVD |
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| LU Meng-xi,CAO Jian.Application of Infrared Measurement Technology in MOCVD[J].Semiconductor Technology,2007,32(8):689-691,731. |
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| Authors: | LU Meng-xi CAO Jian |
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| Affiliation: | The 13^th Research Institute, CETC, Shijiazhuang 050051, China |
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| Abstract: | The working principle and the theory of infrared radiation measurement technology are described. During the silicon epitaxial layer growth of MOCVD, the reflectivity of the wafer changes real-timely. The traditional infrared radiation measurement can not realize real-time measurement, thus has big measuring error and is unable to respond to the surface temperature and realize the measurement of growth speed in suit simultaneously. The MOCVD system of German AIXTRON company has LED-infrared irradiance apparatus controlled by pulse signals. This system can achieve in situ real-time measurement of temperature and reflectivity, growth speed and film thickness, thereby it can control temperature and film thickness exactly, good experimental effect can be obtained. |
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| Keywords: | infrared radiation temperature measurement film thickness measurement situ real-time measurement MOCVD |
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