Electrical characterization of interface states in Ni/n-Si(111) Schottky diodes from (C-V) characteristics

Experiments have been performed on Ni/n-Si(111) Schottky diodes fabricated by the vacuum vapor deposition of Ni at 10⁻⁵ Torr pressure on an n-type «111å oriented silicon wafer. Measured current-voltage and capacitance-voltage characteristics in range frequency range 10 kHz-1 MHz have been analysed. Interface states parameters have been extracted from (C-V) characteristics using a metal-thin interfacial layer-semiconduct (MIS) structure model. The interface states density has been found to be in the range of 10¹¹ cm⁻² eV⁻¹ with a peak in the band gap of Si at about 0·51 eV below the conduction band edge.