| 多晶硅双栅全耗尽SOI CMOS器件与电路 |
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| 引用本文： | 连军,海潮和.多晶硅双栅全耗尽SOI CMOS器件与电路[J].固体电子学研究与进展,2006,26(1):124-127. |
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| 作者姓名： | 连军 海潮和 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 对多晶硅双栅全耗尽SO I CM O S工艺进行了研究,开发出了1.2μm多晶硅双栅全耗尽SO I CM O S器件及电路工艺,获得了性能良好的器件和电路。NM O S和PM O S的阈值电压绝对值比较接近,且关态漏电流很小,NM O S和PM O S的驱动电流分别为275μA/μm和135μA/μm,NM O S和PM O S的峰值跨导分别为136.85 m S/mm和81.7 m S/mm。在工作电压为3 V时,1.2μm栅长的101级环振的单级延迟仅为66 ps。
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| 关 键 词： | 绝缘体上硅 全耗尽 互补金属氧化物半导体 |
| 文章编号： | 1000-3819（2006）01-124-04 |
| 收稿时间： | 2004-04-26 |
| 修稿时间： | 2004-06-07 |
Fully-depleted SOI CMOS Devices and Circuits with Dual Poly Gate |
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| LIAN Jun,HAI Chaohe.Fully-depleted SOI CMOS Devices and Circuits with Dual Poly Gate[J].Research & Progress of Solid State Electronics,2006,26(1):124-127. |
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| Authors: | LIAN Jun HAI Chaohe |
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| Abstract: | Dual poly gate fully-depleted SOI CMOS devices and circuits were investigated.The process of 1.2 μm fully-depleted SOI CMOS devices and circuits with dual poly gate were successfully developed.The performance of devices and circuits are excellent.The V_Tof NMOS and PMOS is symmetrical. The leakage current is very small.The drive currents of NMOS and PMOS are 275 μA/μm and 135 μA/μm respectively.The g_m of NMOS is 136.85 mS/mm and PMOS is 81.7 mS/mm.The per-stage propagation delay of 101-stage ring oscillator is 66 ps with 3 V supply voltage. |
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| Keywords: | SOI fully-depleted CMOS |
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