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Galvanic coupling between copper and aluminium in a thin-layer cell
Authors:Christine Blanc  Bernard Tribollet
Affiliation:a Université de Toulouse, CIRIMAT, UPS/INPT/CNRS, ENSIACET, 4 Allée Émile Monso, BP 44362, 31432 Toulouse Cedex 04, France
b Laboratoire Interfaces et Systèmes Électrochimiques, UPR 15 du CNRS, Université Pierre et Marie Curie, 4 Place Jussieu, CP 133, 75252 Paris Cedex 05, France
Abstract:The Al/Cu coupling was investigated in a thin-layer cell formed by a large Cu electrode and an Al microelectrode embedded in an insulator placed above the Cu electrode. By using a scanning electrochemical microscope (SECM) the thickness of the thin layer was perfectly controlled with a precision in the micrometer range. A copper deposit on an electrochemical quartz crystal microbalance (EQCM) was also used as SECM substrate to quantify the copper dissolution rate. It was shown that such an experimental set-up allows to mimic the galvanic corrosion of intermetallic particles embedded in the aluminium matrix of the 2XXX series aluminium alloys. The combination of the SECM and the EQCM permitted the evaluation of the corrosion rate of copper at the corrosion potential of the 2024 Al alloy, whereas cyclic voltammetry performed on the SECM tip indicated the enrichment in Cu2+ ions in the thin electrolyte layer.
Keywords:A  Aluminium  A  Copper  A  Alloy
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