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Utilizing the SIMS technique in the study of grain boundary diffusion along twist grain boundaries in the Cu(Ni) system |
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| Authors: | S M Schwarz B W Kempshall L A Giannuzzi F A Stevie |
| Affiliation: | a Mechanical, Materials & Aerospace Engineering, University of Central Florida, 32816, Orlando, FL, USA b Analytical Instrumentation Facility, North Carolina State University, 27695, Raleigh, NC, USA |
| Abstract: | The secondary ion mass spectrometry (SIMS) technique was used to study grain boundary diffusion along (100) twist grain boundaries in the Cu(Ni) system. Concentration profiles of Ni down Cu twist grain boundaries with nominal disorientation angles of 10°, Σ5 (36.87°), and 45°, were measured using the SIMS technique. The average activation energy for grain boundary diffusion, Qb, was found to be 245±22, 140±10, and 102±15 kJ/mol, for the 10°, Σ5, and 45° twist grain boundaries, respectively. The average grain boundary diffusion pre-exponential term, sδDbo, was found to be 9.6±1.24×10?9, 1.1±0.17×10?14, and 1.3±0.36×10?16 m3/s, for the 10°, Σ5, and 45° twist grain boundaries, respectively. |
| Keywords: | SIMS Grain boundary diffusion Cu(Ni) Twist grain boundaries |
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