New type bandgap reference for UHF RFID tag |
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Authors: | DU Yongqian ZHUANG Yiqi LI Xiaoming JING Xin DAI Li |
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Affiliation: | (Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071, China) |
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Abstract: | A novel low-voltage, low-power current mode bandgap reference circuit for the passive UHF RFID tag is presented. The ICTAT current is generated by VBE of the BJT transistor. The ICTAT current is generated by the MOSFET biased in the sub-threshold region, based on the theory that the I-V curve of the sub-threshold MOSFET shows an exponential relationship. The circuit is designed and implemented by TSMC 0.18μm CMOS technology. The biggest variation of Vref of the reference is smaller than 1.75%. Test results show that the power of the circuit is 0.65μW, and that the minimum operating voltage is 0.829V. The active area of the circuit is about 0.04mm2. As a result, the read sensitivity of the tag with the proposed bandgap reference circuit is -16dBm. |
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Keywords: | ultra high frequency radio frequency identification low voltage low power sub-threshold bandgap reference |
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