AlN-W多层共烧结基片的界面分析

本文利用光学显微镜和扫描电镜对共烧结多层ＡｌＮ－Ｗ界面特征进行了观察与研究。光学显微镜观察表明：Ａｌ－Ｗ共烧界面为起伏交错的交联状，ＡｌＮ和Ｗ各自嵌入到对方基体中。ＳＥＭ进一步观察表明，内交联的界面实现了Ｗ层在ＡｌＮ基体上的附着。界面处无明显的次生相生成。ＳＥＭ的能谱（ＥＤＡＸ）对界面上的Ａｌ和Ｗ元素分布进行表明：在几微米的分辨率范围内，既没有Ｗ向ＡｌＮ层的扩散，也没有Ａｌ向Ｗ层的扩散。通过对剥离Ｗ膜界面侧Ｗ形貌与自由表面Ｗ形貌对比观察表明，共烧界面Ｗ的重结晶与晶粒长大受到ＡｌＮ的制约，晶粒呈小晶粒结构。

Interface Analyses in AIN-W Co-Fired Multilayer Substrate

The AIN-W interfaces in a co-fired multilayer AIN substrate were observed by optical microscope and scanning electron microscope. Optical observations showed that the co-fired AIN-W interfaces was intricate inter locking. The AIN-W grain structure at the interface was intricated and uneven. SEM observations showed that the covering of W pad on the AIN substrate was by the interlocking. There was no second phase in the interfaces. Energy dispersive X-Ray analyses (EDAD) in SEM revealed that there was no diffusion of W or Al at the interface at the order of a few micrometer's resolution. After the W pad was removed from AIN substrate, the surface morphology of the W film at the interface side was found to be very rough, with a small-grain microstructure compared with that at the free surface side.