Structure analysis of self‐assembled ErSi2 nanowires formed on Si (110) substrates |
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| Authors: | Yusuke Katayama Ryouki Watanabe Tomohiro Kobayashi Takashi Meguro Xinwei Zhao |
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| Affiliation: | 1. Tokyo University of Science, Japan;2. The Institute of Physical and Chemical Research (RIKEN), Japan |
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| Abstract: | The ErSi2 nanowires were formed on Si(110) substrates by a self‐assembled growth process without a high vacuum system. All of the nanowires were highly parallel and along the Si [1‐10] direction. It was shown by structural analysis that the nanowires consisted of two types, which displayed a similar surface morphology. The first type is ErSi2 nanowires buried into the Si substrate at a depth of 30 mm, and the other is ErSi2 thin layers covering a wire‐like Si surface. The latter is suggested to be the remaining structure after evaporation of the first type wires during high‐temperature annealing. © 2009 Wiley Periodicals, Inc. Electr Eng Jpn, 167(3): 58–62, 2009; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20790 |
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| Keywords: | ErSi2 nanowire TEM crystal structure |
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