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| 低阻VDMOSFET的优化设计与制造 | |
| 引用本文： | 石广源,罗华,高嵩,王中文,阎冬梅. 低阻VDMOSFET的优化设计与制造[J]. 微电子学与计算机, 2003, 20(9): 58-59,78 |
| 作者姓名： | 石广源 罗华 高嵩 王中文 阎冬梅 |
| 作者单位： | 1. 辽宁大学,沈阳,110036 2. 哈尔滨学院物理与电子工程系,哈尔滨,150086 |
| 摘 要： | 文章对9926型双N沟增强型VDMOSFET进行了结构和版图的优化设计。给出了该器件的纵横向结构参数,材料的物理参数和版图总体结构。单胞结构的优化设计使单胞密度达到204万个/cm2,比国际市场现有产品的单胞密度(156万个/cm2)提高了30%。这种设计采用浅n+注入工艺可使器件生产成本下降31%。最后对研制结果进行了分析讨论。 |
| 关 键 词： | 低阻VDMOSFET 优化设计 制造 导通电阻 CAD 电阻率 |
The Optimal Design and Manufacture of Low Resistance VDMOSFET |
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| SHI Guang-yuan,GAO Song,WANG Zhong-wen,YAN Dong-mei. The Optimal Design and Manufacture of Low Resistance VDMOSFET[J]. Microelectronics & Computer, 2003, 20(9): 58-59,78 | |
| Authors: | SHI Guang-yuan GAO Song WANG Zhong-wen YAN Dong-mei |
| Abstract: | The optimal design of structure and layout for9926dual N-channel enhancement mode VDMOSFET is presented.The vertical and lateral structural parameters,physical parameters of material and total structure of layout for the fabricated device are put forward.The optimal design of unit cell structure make cell density reached2.04million/cm 2 ,it has increased by30percent compared to cell density of international market existing products(1.56million/cm 2 ).The production costs of device may reduce31percent with the shallow n + implant technology.Lastly,the Manufacture results are discussed. |
| Keywords: | VDMOSFET Design Cell density Manufacture |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |