New structure of enhancement-mode GaAs microwave m.o.s.f.e.t. |
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Authors: | Mimura T Odani K Yokoyama N Fukuta M |
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Affiliation: | Fujitsu Laboratories Ltd., Kawasaki, Japan; |
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Abstract: | This letter proposes a new feasible device structure of an enhancement-mode GaAs deep-depletion m.o.s.f.e.t. as an attractive alternative to the junction-gate f.e.t.s and describes its microwave properties. The device has been fabricated on a high-resistance epitaxial n?-layer by simple readily available technology without requiring the sophisticated control of the channel thickness needed for the conventional junction-gate f.e.t.s. The 'normally-off nature of the device can be explained on the basis of the substrate space-charge region extending over then?-layer. The microwave performance of the device can be favourably compared with that of currently achievable junction-gate normally-off f.e.t.s. Unilateral gain drops to zero at a frequency slightly above 7 GHz. |
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