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Characterization of Hafnium-Zirconium-Oxide-Nitride films grown by ion beam assisted deposition |
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| Authors: | C.G. Jin T. Yu Y. Bo Y. Zhao H.Y. Zhang Y.J. Dong X.M. Wu L.J. Zhuge S.B. Ge |
| Affiliation: | a Department of Physics, Soochow University, Suzhou 215006, China b Analysis and Testing Center, Soochow University, Suzhou 215006, China c The Key Laboratory of Thin Films of Jiangsu, Soochow University, Suzhou 215006, China d State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China |
| Abstract: | Hafnium-Zirconium-Oxide-Nitride (Hf1−xZrxO1−yNy) films are prepared by ion beam assisted deposition on p-Si and quartz substrates with a composite target of sintered high-purity HfO2 and ZrO2. The thermal stability and microstructure characteristics for Hf1−xZrxO1−yNy films have been investigated. EDS results confirmed that nitrogen was successfully incorporated into the Hf1−xZrxO2 films. XRD and Raman analyses showed that the Hf1−xZrxO1−yNy films remain amorphous after 1100 °C under vacuum ambient, and monoclinic HfO2 and ZrO2 crystals separate from Hf1−xZrxO1−yNy films with a increase of the annealing temperature up to 1300 °C. Meanwhile, the Hf1−xZrxO1−yNy films can also effectively suppress oxygen diffusion during high temperature annealing. AFM measurements demonstrated that surface roughness of the Hf1−xZrxO1−yNy films increase slightly. Then the optical properties of the samples were observed in the ultraviolet-visible range at room temperature. The variation in Eg from 5.64 to 6.09 eV as a function of annealing temperature has also been discussed briefly. |
| Keywords: | High-k dielectrics HfO2 ZrO2 Structure Optical properties |
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