An analytical model for optimizing the performance of graphene based silicon Schottky barrier solar cells |
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| Affiliation: | 1. Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz, Iran;2. School of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA 6009, Australia;1. Materials Science Laboratory, School of Physics, Vigyan Bhawan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, India;2. Acropolis Technical Campus, Near Tillore Village, Rala Mandal, Indore 452020, India;3. Indore Institute of Science and Technology, Pithampur Road, Rau, Indore 453331, India;1. Department of Zoology, Science College, King Saud University, P. O. Box 2455, Riyadh 11451, Saudi Arabia;2. Electron Microscope and Thin Films Department, National Research Center, El- Behooth Street, 12622 Dokki, Cairo, Egypt;3. Physics Department, Faculty of Science, Taif University, 21974 Taif, P.O. Box 888, Saudi Arabia;4. Spectroscopy Department, Physics Division, National Research Center, El Behooth Str., 12622 Dokki, Cairo, Egypt;1. Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l’Environnement, Faculté des Sciences de Gabès, Université de Gabès, Cité Erriadh, 6079, Gabès, Tunisia;2. Unité de Recherche Matériaux Avancés et Nanotechnologie, ISSAT Kasserine, Université de Kairouan, Kairouan, 3100, Tunisia;1. School of materials Science and Engineering, Shanghai University, No. 149, Yanchang Road, Shanghai 200072, PR China;2. Key lab of advanced display and system application, Ministry of Education, Shanghai University, No. 149, Yanchang Road, Shanghai 200072, PR China |
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| Abstract: | In this paper, a model taking into account the effects of carrier loss mechanisms has been developed. The model simulates the photovoltaic properties of the graphene/n-type silicon Schottky barrier solar cells (G/n-Si_SBSC), and it can reproduce the experimentally determined parameters of the G/n-Si_SBSC. To overcome the low efficiencies of G/n-Si_SBSC, their performances have been optimized by modifying the work function of graphene and Si properties, accounted for variation of its thickness and doping level. The obtained results show that the work function of graphene has the major impact on the device performance. Also, the temperature dependence of the G/n-Si_SBSC performance is investigated. |
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| Keywords: | Analytical model Conversion efficiency Graphene Solar cell |
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